Gallium nitride (GaN) material holds promise for emerging high-power devices that are more energy efficient than existing technologies — but these GaN devices traditionally break down when exposed to high voltages. Now researchers at North C…
Under an Office of Naval Research basic research effort, researchers at Advanced Technology Materials Inc. have grown thin layer silicon from isotopically purified silane gas (Si28H4). The result is a semiconductor that at room temperature conducts electricity about 30 percent better than traditional silicon. That’s important because by increasing thermal conductivity devices and circuits can be driven with a higher current?speed before they start to burn out.